Liding Zhang
Dipl.-Phys.
Liding Zhang’s practice involves patent drafting and prosecution as well as opposition proceedings before the European and German patent offices. His technical background is based on many years of research and development in academia as well as the industry.
Liding brings his expertise to classic fields of physics and electrical engineering, in particular to semiconductor technology, nanoelectronics as well as to interfacial and chemical physics.
German and European Patent Attorney
Bureau: Munich
Langues: German, English, Chinese
+49 89 928 05-0
liding.zhang(at)bardehle.de
Thanks to my interdisciplinary experiences in academia and the industry as well as my multicultural personal background, I clearly communicate issues that matter for protecting your innovations and ideas.
Publications
"On-surface activation of trimethylsilyl-terminated alkynes on coinage metal surfaces." ChemPhysChem 20.18 (2019): 2382-2393.
"Terminal alkyne coupling on a corrugated noble metal surface: From controlled precursor alignment to selective reactions." Chemistry–A European Journal 23.62 (2017): 15588-15593.
"Functionalized Graphdiyne Nanowires: On‐Surface Synthesis and Assessment of Band Structure, Flexibility, and Information Storage Potential." Small 14.14 (2018): 1704321.
"Surface‐Dependent Chemoselectivity in C− C Coupling Reactions." Angewandte Chemie 131.25 (2019): 8444-8449.
German and European Patent Attorney at BARDEHLE PAGENBERG, Munich, Germany
Licensed to practice as European Patent Attorney
Admitted to the German Bar of Patent Attorneys
Patent Engineer and Trainee Patent Attorney trainee at BARDEHLE PAGENBERG in Munich, Germany
Studies of law for patent attorneys at the Fernuniversität Hagen, Germany
Doctoral candidate at the Chair for Surface and Interface Physics (dissertation pending), Physics Department, Technical University of Munich, Garching, Germany, in cooperation with the International Max Planck Research School for Advanced Photon Science, Max Planck Institute for Quantum Optics, Garching, Germany
Diploma thesis at Infineon Technologies AG in Neubiberg, Germany, at the Department of Electrical and Computer Engineering, Technical University of Munich, Munich, Germany, and at the Walter Schottky Institute (WSI) for Semiconductor Physics, Technical University of Munich, Garching, Germany
Physics Diploma at the Technical University of Munich, Garching, Germany